DECHANNELING AND MODIFICATION OF PARTICLE DISTRIBUTION INDUCED BY LATTICE-DEFECTS

被引:10
作者
MATSUNAMI, N [1 ]
机构
[1] NAGOYA UNIV,DEPT NUCL ENGN,NAGOYA,JAPAN
关键词
D O I
10.1143/JPSJ.38.848
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:848 / 854
页数:7
相关论文
共 23 条
[1]  
Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561
[2]  
Andersen J.U., 1972, RADIAT EFF, V12, P219
[3]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[4]  
BONDERUP E, 1972, RADIAT EFF, V12, P261
[5]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[6]  
Domeij B., 1970, Radiation Effects, V6, P155, DOI 10.1080/00337577008235059
[7]  
Eisen F. H., 1970, Atomic collision phenomena in solids, P111
[9]   DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].
FELDMAN, LC ;
RODGERS, JW .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3776-&
[10]  
Lindhard J, 1965, K DAN VIDENSK SELSK, V34