共 7 条
[1]
FRIAR EM, 1963, ANN C PHYS ELECTRO
[2]
LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (04)
:L210-L212
[4]
ION CURRENT-DENSITY AND ION ENERGY-DISTRIBUTIONS AT THE ELECTRON-CYCLOTRON RESONANCE POSITION IN THE ELECTRON-CYCLOTRON RESONANCE PLASMA
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1991, 30 (02)
:423-427
[5]
EXTREMELY HIGH SELECTIVE, HIGHLY ANISOTROPIC, AND HIGH-RATE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR N+ POLY-SI AT THE ELECTRON-CYCLOTRON RESONANCE POSITION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (06)
:1192-1198
[6]
ION CURRENT-DENSITY AND ITS UNIFORMITY AT THE ELECTRON-CYCLOTRON RESONANCE POSITION IN ELECTRON-CYCLOTRON RESONANCE PLASMA
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1991, 9 (01)
:85-90