TRANSPORT-PROPERTIES OF EPITAXIAL BSCCO FILMS GROWN ON UNTWINNED NDGAO3 SUBSTRATES

被引:9
作者
BALESTRINO, G
FOGLIETTI, V
MARINELLI, M
MILANI, E
PAOLETTI, A
PAROLI, P
机构
[1] CNR,IESS,I-00156 ROME,ITALY
[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN MECCAN,I-00173 ROME,ITALY
[3] UNIV CALABRIA,DIPARTIMENTO FIS,I-87036 COSENZA,ITALY
关键词
D O I
10.1016/0038-1098(91)90316-N
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Epitaxial films of Bi2Sr2Ca1Cu2O8 have been grown on NdGaO3, twin-free substrates by liquid phase epitaxy. The films have high crystallographic quality and thickness of about 1-mu-m. The resistivity curve is metallic, with a sharp (2.9 K wide) resistive transition and zero resistivity at 84.5 K. The critical current density at 77.3 K is 10(4) A/cm2, extrapolating to about 5 10(5) A/cm2 at 4.2 K. The latter value is more than one order of magnitude higher than that obtained using LaGaO3 substrates, although lower than the one measured on films grown on SrTiO3.
引用
收藏
页码:839 / 841
页数:3
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