Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric

被引：19

作者：

Melnick, BM ^{[1
]}

Gregory, J ^{[1
]}

DeAraujo, CAP ^{[1
]}

机构：

[1] SYMETRIX CORP,COLORADO SPRINGS,CO 80918

来源：

INTEGRATED FERROELECTRICS | 1995年 / 11卷 / 1-4期

基金：

英国惠康基金; 美国国家卫生研究院;

关键词：

D O I：

10.1080/10584589508013587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the feasibility of a 1T-1C memory cell consisting of an n-channel transistor and ferroelectric SrBi2Ta2O9 as the capacitor dielectric. 1T-1C ferroelectric memory cells processed through interconnect metalization are discussed. Advantages and disadvantages of two different process sequences are examined. Data indicates that n-channel transistor damage is highly dependent on the process sequence, and that a SrBi2Ta2O9 1T-1C memory cell is fully functional through interconnect metalization.

引用

页码：145 / 160

页数：16