ON 1/F NOISE OF HOT-ELECTRONS IN SILICON

被引：20

作者：

KLEINPENNING, TGM

机构：

来源：

PHYSICA B & C | 1982年 / 113卷 / 02期

关键词：

D O I：

10.1016/0378-4363(82)90065-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：189 / 194

页数：6

共 15 条

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[4] FLICKER NOISE OF HOT HOLES IN SILICON AT 78-K [J].

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[5]

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KLEINPENNING, TGM ;

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[8] HOT-ELECTRON NOISE AND G-R NOISE IN SHORT-CHANNEL JFETS [J].

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SOLID-STATE ELECTRONICS, 1981, 24 (05) :429-434

[9] 1-F NOISE OF HOT CARRIERS IN N-TYPE SILICON [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1981, 103 (2-3) :340-344

[10] 1-F NOISE IN SOLID-STATE SINGLE INJECTION DIODES [J].

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PHYSICA B & C, 1978, 94 (02) :141-151

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