A METAL-OXIDE-SEMICONDUCTOR (MOS) HALL ELEMENT

[1] GALLIUM ARSENIDE MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &

[2] CRICCHI JR, 1965, MOS TRANSISTOR RES 2

[3] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 427 - &

[4] LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248

[5] LIPPMANN H, 1958, Z NATURFORSCH, VA 13, P474

[6] ANALOG MULTIPLIER BASED ON THE HALL EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 158 - 166

[7] A SILICON HALL ELEMENT FOR APPLICATION IN AN ANALOG MULTIPLIER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (05) : 379 - &

[8] PHILLIPS AB, 1964, IEEE SPECTRUM, V1, P83

[9] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[10] SCHILLMAN E, 1957, TECHNISCHEN RUNDSCHA, V42, P9

[1] GALLIUM ARSENIDE MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &

[2] CRICCHI JR, 1965, MOS TRANSISTOR RES 2

[3] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 427 - &

[4] LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248

[5] LIPPMANN H, 1958, Z NATURFORSCH, VA 13, P474

[6] ANALOG MULTIPLIER BASED ON THE HALL EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 158 - 166

[7] A SILICON HALL ELEMENT FOR APPLICATION IN AN ANALOG MULTIPLIER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (05) : 379 - &

[8] PHILLIPS AB, 1964, IEEE SPECTRUM, V1, P83

[9] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[10] SCHILLMAN E, 1957, TECHNISCHEN RUNDSCHA, V42, P9