机构:Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
HORNSEY, RI
CLEAVER, JRA
论文数: 0引用数: 0
h-index: 0
机构:Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
CLEAVER, JRA
AHMED, H
论文数: 0引用数: 0
h-index: 0
机构:Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
AHMED, H
机构:
[1] Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
来源:
PHYSICAL REVIEW B
|
1993年
/
48卷
/
19期
关键词:
D O I:
10.1103/PhysRevB.48.14679
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Transverse electron focusing is reported for hot electrons. Differential transresistance measurements show anomalous behavior at high electron energies. Corresponding dc electron focusing data reveal that the differential characteristics arise from the electron energy dependences of the mean free path and specularity coefficient. The variation of mean free path with energy is derived from the experimental data.