ELECTRICAL CONDUCTANCE VARIATION OF A-SI-H FILMS DURING A TEMPERATURE-PROGRAMMED DESORPTION

被引：3

作者：

AOUCHER, M ^{[1
]}

MOHAMMEDBRAHIM, T ^{[1
]}

FORTIN, B ^{[1
]}

COLIN, Y ^{[1
]}

机构：

[1] UNIV RENNES 1,MICROELECTR & VISUALISAT GRP,F-35042 RENNES,FRANCE

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1993年 / 54卷 / 09期

关键词：

SURFACE REACTION; AMORPHOUS SEMICONDUCTING FILM; GAS SOLID ADSORPTION; GAS SOLID DESORPTION; ACTIVATION ENERGY; OXIDATION;

D O I：

10.1016/0022-3697(93)90006-D

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this investigation we report on the conductance of a Si:H films during a temperature programmed desorption (DELTAG-TPD) following an isothermal adsorption of molecular oxygen. Experimental conditions which give a restoration of the conductance vs temperature characteristics are described. A model of the conductance variation of an a-Si: H film, in the presence of ionosorbed species is proposed to fit the DELTAG-TPD curves. Ionosorption of oxygen on a-Si: H films shows the existence of traps located at 0.66 +/- 0.03 eV, below the bottom of the conduction band, close to the Fermi level at the surface, with a frequency factor 7 +/- 3 x 10(4) Hz. The initial density of adsorbed particles is estimated between 10(10) and 10(11) cm-2.

引用

页码：1009 / 1014

页数：6

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