CHARACTERIZATION OF GAAS BY FAR INFRARED REFLECTIVITY

被引：31

作者：

PERKOWITZ, S ^{[1
]}

BREECHER, J ^{[1
]}

机构：

[1] EMORY UNIV, PHYS DEPT, ATLANTA, GA 30322 USA

来源：

INFRARED PHYSICS | 1973年 / 13卷 / 04期

关键词：

D O I：

10.1016/0020-0891(73)90042-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：321 / 326

页数：6

共 14 条

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[3] IWASA S, 1964, PHYSICS SEMICONDUCTO, P1077
[4] KAHAN A, 1970, B AM PHYS SOC, V15, P799
[5] KAHAN A, PRIVATE COMMUNICATIO
[6] KUKHARSKII AA, 1970, SOV PHYS SEMICOND+, V4, P234
[7] LYDEN HA, 1964, PHYS REV, V134, P1106
[8] OBSERVATION OF INTERACTION OF PLASMONS WITH LONGITUDINAL OPTICAL PHONONS IN GAAS
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[9] USE OF PLASMA EDGE REFLECTION MEASUREMENTS IN STUDY OF SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (05): : 1435 - &
[10] LONGITUDINAL-OPTICAL-PHONON-PLASMON COUPLING IN GAAS
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[J]. PHYSICAL REVIEW, 1969, 177 (03): : 1231 - &