OPTICAL DISPERSION BY WANNIER EXCITONS

被引:133
作者
TANGUY, C
机构
[1] France Telecom, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92225 Bagneux Cedex
关键词
D O I
10.1103/PhysRevLett.75.4090
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An analytical expression of the complex dielectric constant of Wannier excitons is obtained, which includes exactly the contributions of all bound and unbound states. It allows an improved description of the excitonic influence on the optical properties of semiconductors near the band gap, especially with respect to dispersion effects.
引用
收藏
页码:4090 / 4093
页数:4
相关论文
共 28 条
[1]  
Elliott R.J., Phys. Rev., 108, (1957)
[2]  
Mott N.F., Massey H.S.W., The Theory of Atomic Collisions, (1984)
[3]  
Sell D.D., Lawaetz P., Phys. Rev. Lett., 26, (1971)
[4]  
Hunsche S., Heesel H., Kurz H., Opt. Commun., 109, (1994)
[5]  
Yamamoto Y., Slusher R.E., Optical Processes in Microcavities, Physics Today, 46, 6, (1993)
[6]  
Hefferman J.F., Hegarty J., Effect of dispersion on the reflectivity of an asymmetric Fabry–Pérot étalon, Applied Physics Letters, 66, (1995)
[7]  
Hefferman J.F., Hegarty J., Semiconductors. Physics of Group IV Elements and III-V Compounds, Group III, 17, a, (1982)
[8]  
Toyozawa Y., Theory of Line-Shapes of the Exciton Absorption Bands, Progress of Theoretical Physics, 20, (1958)
[9]  
Toyozawa Y., Further Contribution to the Theory of the Line-Shape of the Exciton Absorption Band, Progress of Theoretical Physics, 27, (1962)
[10]  
Cardona M., Modulation Spectroscopy, Solid State Physics, Supplement, 11, (1969)