APPLICATION OF INTEGRATED-CIRCUIT TECHNOLOGY TO FABRICATION OF LARGE NUMBERS OF NIOBIUM BASED JOSEPHSON JUNCTIONS

被引：7

作者：

OWEN, S ^{[1
]}

NORDMAN, JE ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT ELECT & COMP ENGN,MADISON,WI 53706

来源：

关键词：

D O I：

10.1109/TMAG.1975.1058676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：774 / 777

页数：4

共 6 条

[1] NIOBIUM SUPERCONDUCTIVE TUNNEL-DIODE INTEGRATED-CIRCUIT ARRAYS [J].

HOEL, LS ;

SCOTT, AC ;

NORDMAN, JE ;

KELLER, WH .

[2]

KULIK I, 1972, ISRAEL PROG SCIENT T, P44

[3]

KULIK I, 1972, ISRAEL PROG SCIENT T, P41

[4] THIN-FILM JOSEPHSON JUNCTIONS USING GETTER-SPUTTERED NIOBIUM [J].

NORDMAN, JE .

[5] DC AND AC JOSEPHSON EFFECT IN SPUTTERED NB-NBOX-PB JUNCTIONS [J].

SCHWIDTAL, K .

[6]

SCHWIDTAL K, 1972, P APPL SUPERCOND C, P562