LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS

被引：65

作者：

BUTLER, JF

HARMAN, TC

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 10期

关键词：

D O I：

10.1063/1.1651847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diode lasers with emission wavelengths as long as 28 μ have been fabricated using Pb1-xSnxTe with x up to 0.27. Properties of laser diodes at 77°K and 12°K have been measured for a number of compositions in the range 0.15 ≤ x ≤ 0.27. The vapor growth and annealing-diffusion steps were performed in a special quartz ampoule which remained sealed throughout the process. Threshold current densities were dependent on diode surface conditions and could be reduced by at least 50% by etching. © 1968 The American Institute of Physics.

引用

页码：347 / &

共 10 条

[1] PRESSURE-TUNED PBSE DIODE LASER (HE GAS PRESSURE 1 TO 7000 BARS VARIATION OF EMISSION PEAK AND REFRACTIVE INDEX 77 DEGREES K E) [J].