CHARGE ACCUMULATION IN A DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE STUDIED BY PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE-EXCITATION SPECTROSCOPY

被引：47

作者：

YOSHIMURA, H ^{[1
]}

SCHULMAN, JN ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.64.2422

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Charge accumulation in the quantum-well region of a double-barrier AlGaAs/GaAs resonant-tunneling-diode structure is studied by using photoluminescence and photoluminescence-excitation spectroscopy. The observed optical spectra are found to change systematically with an applied bias and make it possible to directly determine the charge accumulation under various biasing conditions. At the resonant condition, a charge accumulation of 5×1011 cm-2 is obtained. The importance of band-gap normalization in resonant-tunneling process is also indicated. © 1990 The American Physical Society.

引用

页码：2422 / 2425

页数：4

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