HIGH CONVERSION EFFICIENCY P-N+ INP HOMOJUNCTION SOLAR-CELLS

被引：7

作者：

SHEN, CC ^{[1
]}

CHOI, KY ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT ELECT & COMP ENGN,TEMPE,AZ 85287

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 02期

关键词：

D O I：

10.1109/EDL.1985.26049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 80

页数：3

共 8 条

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BUEHLER, E .

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[2]

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[3] GROWN JUNCTION GAAS SOLAR CELL [J].

SHEN, CC ;

PEARSON, GL .

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[4]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P798

[5] HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR-CELLS [J].

TURNER, GW ;

FAN, JCC ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :400-402

[6]

WOLF M., 1963, ADV ENERG CONVERS, V3, P455, DOI [10.1016/0365-1789(63)90063-8, 10.1016/0365- 1789(63)90063-8, DOI 10.1016/0365-1789(63)90063-8]

[7] MINORITY-CARRIER INJECTION ANNEALING OF ELECTRON IRRADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS [J].

YAMAGUCHI, M ;

ANDO, K ;

YAMAMOTO, A ;

UEMURA, C .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :432-434

[8] HIGH CONVERSION EFFICIENCY AND HIGH RADIATION-RESISTANCE INP HOMOJUNCTION SOLAR-CELLS [J].

YAMAMOTO, A ;

YAMAGUCHI, M ;

UEMURA, C .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :611-613

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