ELECTRODEPOSITION OF ZINC TELLURIDE

被引:76
作者
NEUMANNSPALLART, M [1 ]
KONIGSTEIN, C [1 ]
机构
[1] VIENNA TECH UNIV,INST PHYS CHEM,A-1060 VIENNA,AUSTRIA
基金
奥地利科学基金会;
关键词
ZINC TELLURIDE; SEMICONDUCTORS; ELECTROCHEMICAL DEPOSITION;
D O I
10.1016/0040-6090(95)06641-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The synthesis of polycrystalline thin films of cubic ZnTe by electrochemical plating on conducting substrates (titanium, nickel and F:SnO2 glass) is described. Electrodeposition involves potentiostatic reduction from an acid aqueous bath. The influence of bath composition (concentrations of the precursors TeO2 and Zn2+, and pH), deposition potential and temperature on the chemical composition of the films and on their crystallinity is discussed. The thin films were characterized by X-ray diffraction (XRD), electron probe microanalysis, scanning electron microscopy, and optical measurements. For optimized deposition parameters, the XRD pattern of a single-phase, cubic ZnTe was found. Otherwise, the patterns of either Zn or Te were found in addition in some samples. Best results (stoichiometric ZnTe films with a reddish aspect) were obtained from TeO2 saturated solution at a pH of 4.5, 98 degrees C, and a Zn2+ concentration of 0.02 M, employing deposition potentials between - 0.8 V and - 0.9 V vs. Ag/AgCl. The optical and crystalline properties of the films improved by annealing for 1 h at 450 degrees C in argon. By this treatment excess Te found in samples prepared under certain conditions could also be removed.
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页码:33 / 39
页数:7
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