A STUDY OF NEUTRON-INDUCED BASE CURRENT COMPONENT IN SILICON TRANSISTORS

被引:22
作者
GOBEN, CA
机构
关键词
D O I
10.1109/TNS.1965.4323908
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:134 / +
页数:1
相关论文
共 7 条
[1]  
BARRER RM, 1941, DIFFUSION IN THROUGH
[2]  
Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75
[3]  
GOBEN CA, 1964, SCR64195 SAND LAB AL
[4]  
IWERSEN JW, 1962, I RADIO ENGRS T ELEC, VED9, P473
[5]  
LOONEY DH, 1955, 14 US ARM SIGN CORP
[6]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
[7]  
SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895