A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR

被引：18

作者：

HIKOSAKA, K

HIRACHI, Y

MIMURA, T

ABE, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 343

页数：3

共 10 条

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[4] A PACKAGED 20-GHZ 1-W GAAS-MESFET WITH A NOVEL VIA-HOLE PLATED HEAT SINK STRUCTURE [J].

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Rosenheck L., 1983, 1983 IEEE MTT-S International Microwave Symposium Digest, P270

[8] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION [J].

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[9]

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[10] HIGH-PERFORMANCE K-BAND GAAS POWER FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (11) :966-968

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