RADIATIVE RECOMBINATION IN N-TYPE INP

被引：32

作者：

LEITE, RCC

机构：

来源：

PHYSICAL REVIEW | 1967年 / 157卷 / 03期

关键词：

D O I：

10.1103/PhysRev.157.672

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：672 / &

共 14 条

[1]

GERSHENZON M, TO BE PUBLISHED

[2]

LEITE RCC, 1965, PHYS REV, V137, P1583

[3] FREQUENCY SHIFT WITH TEMPERATURE AS EVIDENCE FOR DONOR-ACCEPTOR PAIR RECOMBINATION IN RELATIVELY PURE N-TYPE GAAS [J].

LEITE, RCC ;

DIGIOVANNI, AE .

PHYSICAL REVIEW, 1967, 153 (03) :841-+

[4] LASER-EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GAAS + BAND-FILLING MODEL ( FREQUENCY SHIFT WITH EXCITATION INTENSITY 77 DEGREES K E ) [J].

LEITE, RCC ;

RIPPER, JE ;

GUGLIELMI, PA .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :188-+

[5]

LEITE RCC, TO BE PUBLISHED

[6]

LEITE RCC, 1966, PHYS REV LETTERS, V17, P538

[7] RECOMBINATION RADIATION IN GAAS [J].

NATHAN, MI ;

BURNS, G .

PHYSICAL REVIEW, 1963, 129 (01) :125-&

[8] OPTICAL PROPERTIES OF N-TYPE INP [J].

NEWMAN, R .

PHYSICAL REVIEW, 1958, 111 (06) :1518-1521

[9] INJECTION LUMINESCENCE IN GAAS BY DIRECT HOLE-ELECTRON RECOMBINATION [J].

SARACE, JC ;

KAISER, RH ;

WHELAN, JM ;

LEITE, RCC .

PHYSICAL REVIEW, 1965, 137 (2A) :A623-&

[10] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

STURGE, MD .

PHYSICAL REVIEW, 1962, 127 (03) :768-+

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