THE GROWTH OF GASB UNDER MICROGRAVITY CONDITIONS

被引：19

作者：

LENDVAY, E

HARSY, M

GOROG, T

GYURO, I

POZSGAI, I

KOLTAI, F

GYULAI, J

LOHNER, T

MEZEY, G

KOTAI, E

PASZTI, F

HRJAPOV, VT

KULTCHISKY, NA

REGEL, LL

机构：

[1] HUNGARIAN ACAD SCI,CENT RES INST PHYS,H-1361 BUDAPEST 5,HUNGARY

[2] ACAD SCI USSR,INST SPACE RES,MOSCOW V-71,USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 71卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90360-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：538 / 550

页数：13

共 18 条

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[4]

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[5]

Goldstain J.I., 1975, PRACTICAL SCANNING E, P150

[6] DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB [J].

HARSY, M ;

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JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :234-238

[7]

HARSY M, UNPUB ACTA PHYS

[8] VAPOR-PHASE GROWTH OF TE-DOPED GASB [J].

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KAKEHI, M ;

SHEN, J ;

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[9] THE TEXTURE OF GASB INGOTS GROWN BY THE BRIDGMAN METHOD [J].

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LENDVAY, E .

CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (12) :1513-1520

[10] OBSERVATIONS OF MICRO-FACETS NEAR IRREGULARLY RE-MELTED SURFACES IN PULLED GASB CRYSTALS [J].

KUMAGAWA, M .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (03) :291-296

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