THE ROLE OF FILM REEMISSION AND GAS SCATTERING PROCESSES ON THE STOICHIOMETRY OF LASER-DEPOSITED FILMS

被引：32

作者：

GONZALO, J

AFONSO, CN

PERRIERE, J

机构：

[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

[2] UNIV PARIS 06,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.114528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser ablation of a BiSrCaCuO target is performed both in vacuum and in an oxygen pressure of 0.1 mbar. Two substrates are located in the chamber in order to study the role of re-emission processes from the growing film and/or the scattering of the ablated species by an oxygen atmosphere. The results indicate that re-emission processes from the growing film are very weak (they may affect up to 1% of the deposited material at most) and are not related to the re-sputtering of the growing film. Films grown in vacuum are found to have the correct cation composition, whereas those grown in an oxygen environment show significant variations which are clearly related to gas scattering processes. (C) 1995 American Institute of Physics.

引用

页码：1325 / 1327

页数：3