MECHANISM OF A HYDROGENATING POLYCRYSTALLINE SILICON IN HYDROGEN PLASMA ANNEALING

被引:6
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NAKAZAWA, K
ARAI, H
KOHDA, S
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D O I
10.1063/1.98575
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O59 [应用物理学];
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页码:1623 / 1625
页数:3
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[1]  
Grove A. S., 1967, PHYS TECHNOL S, P43
[2]  
HASEGAWA S, 1982, J APPL PHYS, V53, P5022, DOI 10.1063/1.331378
[3]   HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&
[4]   HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI ;
MARCOUX .
ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161
[5]   HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].
POLLACK, GP ;
RICHARDSON, WF ;
MALHI, SDS ;
BONIFIELD, T ;
SHICHIJO, H ;
BANERJEE, S ;
ELAHY, M ;
SHAH, AH ;
WOMACK, R ;
CHATTERJEE, PK .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470
[6]   STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].
SEAGER, CH ;
GINLEY, DS .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1050-1055