COMPLEX PERMITTIVITY OF GAAS AND CDTE AT MICROWAVE-FREQUENCIES

被引:15
作者
COURTNEY, WE [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1109/TMTT.1977.1129189
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:697 / 701
页数:5
相关论文
共 24 条
[1]   ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM [J].
BERLINCOURT, D ;
SHIOZAWA, LR ;
JAFFE, H .
PHYSICAL REVIEW, 1963, 129 (03) :1009-&
[2]  
BRAZLAU N, 1967, APP PHYS LETT, V11, P350
[3]   TEMPERATURE DEPENDENCE OF MICROWAVE DIELECTRIC CONSTANT OF GAAS LATTICE [J].
CHAMPLIN, KS ;
GLOVER, GH .
APPLIED PHYSICS LETTERS, 1968, 12 (07) :231-&
[4]   SEARCH FOR RESONANCE BEHAVIOR IN MICROWAVE DIELECTRIC CONSTANT OF GAAS [J].
CHAMPLIN, KS ;
ERLANDSON, RJ ;
GLOVER, GH ;
HAUGE, PS ;
LU, T .
APPLIED PHYSICS LETTERS, 1967, 11 (11) :348-+
[6]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[7]  
Hakki B.W., 1960, IEEE T MICROWAVE THE, V8, P402, DOI [10.1109/TMTT.1960.1124749, DOI 10.1109/TMTT.1960.1124749]
[8]   DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J].
HAMBLETON, K ;
HOLEMAN, BR ;
HILSUM, C .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498) :1147-&
[9]  
HENVIS BW, 1962, J PHYS CHEM SOLIDS, V23, P1099
[10]  
IWASA S, 1969, 7TH P INT C PHYS SEM, P1077