DIODE-LASER MEASUREMENT OF THE INFRARED-SPECTRUM OF SILICON MONOSULFIDE

被引：9

作者：

BIRK, H

JONES, H

机构：

[1] Abteilung Physikalische Chemie, Universität Ulm

来源：

CHEMICAL PHYSICS LETTERS | 1990年 / 175卷 / 05期

关键词：

D O I：

10.1016/0009-2614(90)85577-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The infrared spectra of four isotopic forms of silicon monosulfide in natural abundance (SiS)-Si-28-S-32: 87%, (SiS)-Si-28-S-34: 8%, (SiS)-Si-29-S-32: 4.4%, (SiS)-Si-30-S-32: 2.9%) in their ground electronic states (1-SIGMA) have been measured using a diode laser spectrometer. An accurate set of Dunham parameters, mass-independent parameters and mass scaling coefficients were calculated. The coefficients of the Dunham potential of SiS were also accurately determined using a direct fitting procedure.

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页码：536 / 542

页数：7

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