ELECTRON FOCUSING WITH A DOUBLE GRID IN ALGAAS/GAAS HETEROSTRUCTURES

被引：9

作者：

NAKAZATO, K ^{[1
]}

HORNSEY, RI ^{[1
]}

BLAIKIE, RJ ^{[1
]}

CLEAVER, JRA ^{[1
]}

AHMED, H ^{[1
]}

THORNTON, TJ ^{[1
]}

机构：

[1] IMPERIAL COLL SCI TECHNOL & MED, DEPT ELECT ENGN, LONDON SW7 2BT, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.106454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.

引用

页码：1093 / 1095

页数：3

共 13 条

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