OBSERVATION OF IMPURITY EFFECTS ON THE NUCLEATION OF ARSENIC PRECIPITATES IN GAAS

被引：23

作者：

IBBETSON, JP ^{[1
]}

SPECK, JS ^{[1
]}

GOSSARD, AC ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The precipitation of arsenic in low temperature GaAs uniformly doped with Si and Be has been studied by transmission electron microscopy. Following an in situ anneal at 600-degrees-C, precipitate size and density is found to be strongly dependent on the dopant type. Impurities at the epilayer/substrate interface lead to heterogeneous nucleation of precipitates. Although precipitates were observed to nucleate heterogeneously at threading dislocations, the precipitates predominantly form homogeneously. These results are consistent with the general theory of precipitation in solids.

引用

页码：169 / 171

页数：3

共 20 条

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