3.9-MU-M INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS WITH HIGH-OUTPUT POWER AND IMPROVED TEMPERATURE CHARACTERISTICS

被引：50

作者：

CHOI, HK

TURNER, GW

LIAU, ZL

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-heterostructure diode lasers emitting at similar to 3.9 mu m have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm(2) obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. (c) 1994 American Institute of Physics.

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页码：2251 / 2253

页数：3

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