INGAAS/INP HETEROBIPOLAR TRANSISTORS FOR INTEGRATION ON SEMI-INSULATING INP SUBSTRATES

[1] INP/INGAAS HETEROJUNCTION PHOTO-TRANSISTOR WITH INTEGRATED LIGHT-EMITTING DIODE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 192 - 193

[2] CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[3] KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[4] KONIG U, UNPUB J ELECTRON MAT

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] PEARSALL TP, 1983, ELEC DEV L, V4, P5

[1] INP/INGAAS HETEROJUNCTION PHOTO-TRANSISTOR WITH INTEGRATED LIGHT-EMITTING DIODE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 192 - 193

[2] CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[3] KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[4] KONIG U, UNPUB J ELECTRON MAT

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] PEARSALL TP, 1983, ELEC DEV L, V4, P5