HIGH-PERFORMANCE INP INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：13

作者：

NOTTENBURG, RN

CHEN, YK

TANBUNEK, T

LOGAN, RA

HUMPHREY, DA

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：171 / 172

页数：2

共 11 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2571-2579

[2] A STRIPE-GEOMETRY INGAASP/INP HETEROJUNCTION BIPOLAR-TRANSISTOR SUITABLE FOR OPTICAL INTEGRATION [J].

CHEN, TR ;

ZHUANG, YH ;

CHANG, B ;

YI, MB ;

YARIV, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :191-193

[3] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HOUSTON, PA ;

BLAAUW, C ;

MARGITTAI, A ;

SVILANS, MN ;

PUETZ, N ;

DAY, DJ ;

SHEPHERD, FR ;

SPRINGTHORPE, AJ .

ELECTRONICS LETTERS, 1987, 23 (18) :931-932

[4] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].

LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[5] SCALING BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LEVI, AFJ .

ELECTRONICS LETTERS, 1988, 24 (20) :1273-1275

[6] A STUDY OF FE-DOPANTS FOR GROWTH OF SEMIINSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

MACRANDER, AT ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :42-46

[7] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J].

NAGATA, K ;

NAKAJIMA, O ;

YAMAUCHI, Y ;

NITTONO, T ;

ITO, H ;

ISHIBASHI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :2-7

[8] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HUMPHREY, DA ;

HAMM, R .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :30-32

[9] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HAMM, R ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :524-526

[10] MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SHIBATA, J ;

NAKAO, I ;

SASAI, Y ;

KIMURA, S ;

HASE, N ;

SERIZAWA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :191-193

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