MOLECULAR-BEAM EPITAXY OF IN1-XGAXASYP1-Y(Y CONGRUENT-TO 2.2 X) LATTICE MATCHED TO INP USING GAS CELLS

被引：6

作者：

HUET, D

LAMBERT, M

机构：

[1] Lab de Marcoussis, Div Composants Optoelectroniques, Fr, Lab de Marcoussis, Div Composants Optoelectroniques, Fr

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 01期

关键词：

HALL EFFECT - Measurements - MOLECULAR BEAM EPITAXY - PHOTOLUMINESCENCE;

D O I：

10.1007/BF02649948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uniform large area (5 cm** minus **2) epitaxial layers of quaternary materials, In//1// minus //xGa//xAs//yP//1// minus //y lattice matched to InP, can be reproducibly grown over the whole range of composition 1 greater than y greater than 0 with an accurate control of the composition by using gas cells as sources for group V elements. Gas cells are very suitable sources because they don't need sophisticated regulation of the furnace temperature, they permit a flexible and precise control of the composition, they allow a few hundred hours of growth without replenishment.

引用

页码：37 / 40

页数：4

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