MODELING OF REACTORS FOR PLASMA PROCESSING .1. SILICON ETCHING BY CF4 IN A RADIAL FLOW REACTOR

被引：25

作者：

DALVIE, M ^{[1
]}

JENSEN, KF ^{[1
]}

GRAVES, DB ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

CHEMICAL ENGINEERING SCIENCE | 1986年 / 41卷 / 04期

关键词：

D O I：

10.1016/0009-2509(86)87142-1

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

页码：653 / 660

页数：8

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