QUANTIFICATION OF SI3N4 LPCVD INHIBITION ON OXIDE SURFACES

被引：6

作者：

KWAKMAN, LFT ^{[1
]}

LINDOW, EJ ^{[1
]}

GRANNEMAN, EHA ^{[1
]}

MARTIN, F ^{[1
]}

VELER, JC ^{[1
]}

JOLY, JP ^{[1
]}

机构：

[1] CEA,CENG,LETI,GRENOBLE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90592-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si3N4 films were produced in an integrated vacuum processing system with separate modules for HF vapour etching, silicon thermal oxidation and LPCVD of Si3N4. It appears that the initial nucleation rate of the nitride growth depends strongly on the substrate surface. Si3N4 nucleates immediately on HF-vapour etched and thus oxide-free silicon, whereas on silicon oxide an appreciable retardation of growth takes place, which depends on the conditioning of the oxide prior to deposition. Conversion of the (O)N film into (O)NO, the dielectrics of choice in advanced memory capacitors, reveals that the degree of resistance of the nitride film against wet oxidation (''punch-through'') is directly related to the growth inhibition time and hence to the film micro-roughness. Details are presented on the relation between wafer pre-treatment, nitride process conditions, growth inhibition time and the ultimate wet-oxidation resistance of the nitride film.

引用

页码：629 / 633

页数：5