Stresses in Ru/PbZr0.4Ti0.6O3/Ru thin film stacks for integrated ferroelectric capacitors.

被引：7

作者：

Spierings, GACM

Breed, JM

Ulenaers, MJE

vanVeldhoven, PJ

Larsen, PK

机构：

[1] Philips Research Laboratories, 5656 AA Eindhoven

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00152-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ru and RuO2 have recently been introduced as electrode materials for integrated ferroelectric capacitors. Compared with Pt electrodes, they present the advantage of a higher endurance of the capacitor under repeated pulse switching. The stresses in sputter-deposited Ru bottom and top electrodes and in PbZr0.4Ti0.6O3 films deposited using organometallic chemical vapor deposition have been studied in the as-deposited state and in-situ during annealing treatments. It was observed that an annealing treatment of the Ru/PbZr0.4Ti0.6O3/Ru stack influences the stress in the PbZr0.4Ti0.6O3 film.

引用

页码：235 / 238

页数：4

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