1ST DEMONSTRATION OF HIGH-POWER GAINP/GAAS HBT MMIC POWER-AMPLIFIER WITH 9.9-W OUTPUT POWER AT X-BAND

被引：9

作者：

LIU, W

KHATIBZADEH, A

KIM, T

SWEDER, J

机构：

[1] Corporate R&D Department, Texas Instruments, Dallas

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 09期

关键词：

D O I：

10.1109/75.311511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time the large-signal power performance of a MMIC amplifier based on GaInP/GaAs HBT's. A output power of 9.9 W and power-added efficiency of more than 30% are measured at X-band. These results compare favorably with those measured from AlGaAs/GaAs HBT's, demonstrating that GaInP/GaAs HBT's are suitable for microwave power applications.

引用

页码：293 / 295

页数：3

共 9 条

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[9]

pp. 13090-3746

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