KINETICS OF DISTANT-PAIR RECOMBINATION - APPLICATION TO AMORPHOUS-SILICON

被引：9

作者：

DUNSTAN, DJ

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90689-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：902 / 904

页数：3

共 16 条

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[2]

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PAUL, W .

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[4] NON-GEMINATE RADIATIVE RECOMBINATION IN SPUTTERED AND GLOW-DISCHARGE A-SI-H [J].

COLLINS, RW ;

PAUL, W .

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[5]

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[6]

DEPINNA SP, UNPUB

[7] BEHAVIOR OF DONOR-ACCEPTOR RECOMBINATION EMISSION IN II-VI CRYSTALS SUBJECTED TO MAGNETIC-RESONANCE [J].

DUNSTAN, DJ ;

DAVIES, JJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2927-2944

[8] A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H [J].

DUNSTAN, DJ ;

DEPINNA, SP ;

CAVENETT, BC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13) :L425-L429

[9]

DUNSTAN DJ, SOL ST COMM

[10]

DUNSTAN DJ, PHIL MAG

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