IN0.53GA0.47AS/INP FLOATING GUARD RING AVALANCHE PHOTODIODES FABRICATED BY DOUBLE DIFFUSION

被引：24

作者：

ACKLEY, DE ^{[1
]}

HLADKY, J ^{[1
]}

LANGE, MJ ^{[1
]}

MASON, S ^{[1
]}

ERICKSON, G ^{[1
]}

OLSEN, GH ^{[1
]}

BAN, VS ^{[1
]}

LIU, Y ^{[1
]}

FORREST, SR ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,DEPT ELECT ENGN & MAT SCI,LOS ANGELES,CA 90089

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1109/68.58052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.53Ga0.47As/InP separate absorption and multiplication region avalanche photodiodes (SAM-APD's) with doubly-diffused floating guard rings have been demonstrated. The planar, frontside illuminated devices are easily fabricated and incorporate strong guarding against edge and surface breakdown. Edge gain is suppressed both by the action of the floating guard rings and by the grading of the p-n junction at the outer edges of the active region that results from the second diffusion. Uniform gains as high as 85 have been measured at multiplied dark currents <100 nA. Multiplied dark currents below 5 nA have been measured at 90% of breakdown, with capacitances below 400 fF for frontside illuminated devices. The low values of dark current and capacitance, and the ease of fabrication, make the devices well-suited for fiberoptic applications. © 1990 IEEE

引用

页码：571 / 573

页数：3

共 8 条

[1] BLOCKING CAPABILITY OF PLANAR DEVICES WITH FIELD LIMITING RINGS [J].

BRIEGER, KP ;

GERLACH, W ;

PELKA, J .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :739-745

[2] PLANAR AVALANCHE PHOTODIODE WITH A LOW-DOPED, REDUCED CURVATURE JUNCTION [J].

CHI, GC ;

MUEHLNER, DJ ;

OSTERMAYER, FW ;

FREUND, JM ;

PAWELEK, R ;

MCCOY, RJ ;

PETICOLAS, LJ ;

MATTERA, VD .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1158-1160

[3]

Hollenhorst J. N., 1988, SPIE, V995, P53

[4] PLANAR INP/GAINASP/GAINAS BURIED-STRUCTURE AVALANCHE PHOTODIODE [J].

KOBAYASHI, M ;

YAMAZAKI, S ;

KANEDA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :759-761

[5] SIMPLE, VERY LOW DARK CURRENT, PLANAR LONG-WAVELENGTH AVALANCHE PHOTODIODE [J].

LIU, Y ;

FORREST, SR ;

BAN, VS ;

WOODRUFF, KM ;

COLOSI, J ;

ERIKSON, GC ;

LANGE, MJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1311-1313

[6] HIGH-SENSITIVITY OF VPE-GROWN INGAAS/INP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE [J].

MATSUSHIMA, Y ;

NODA, Y ;

KUSHIRO, Y ;

SEKI, N ;

AKIBA, S .

ELECTRONICS LETTERS, 1984, 20 (06) :235-236

[7] PLANAR INP/INGAAS AVALANCHE PHOTODIODES WITH PREFERENTIAL LATERAL EXTENDED GUARD RING [J].

TAGUCHI, K ;

TORIKAI, T ;

SUGIMOTO, Y ;

MAKITA, K ;

ISHIHARA, H ;

FUJITA, S ;

MINEMURA, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :257-258

[8]

WEBB P, 1988, P OBT FIBER COMMUN C, V1, P129

← 1 →