12-W BROAD AREA SEMICONDUCTOR AMPLIFIER WITH DIFFRACTION LIMITED OPTICAL OUTPUT

被引:19
作者
GOLDBERG, L [1 ]
WELLER, JF [1 ]
MEHUYS, D [1 ]
WELCH, DF [1 ]
SCIFRES, DR [1 ]
机构
[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134
关键词
AMPLIFIERS; SEMICONDUCTOR DEVICES; OPTICAL COMMUNICATION;
D O I
10.1049/el:19910580
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Broad area travelling wave GaAlAs SQW optical amplifiers have been fabricated and characterised. Using a 600-mu-m wide and 1000-mu-m long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08-degrees wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in a 400-mu-m wide active area device.
引用
收藏
页码:927 / 929
页数:3
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