ETCHING OF THERMAL OXIDES IN LOW-PRESSURE ANHYDROUS HF/CH3OH GAS-MIXTURE AT ELEVATED-TEMPERATURE

被引：33

作者：

RUZYLLO, J ^{[1
]}

TOREK, K ^{[1
]}

DAFFRON, C ^{[1
]}

GRANT, R ^{[1
]}

NOVAK, R ^{[1
]}

机构：

[1] SUBMICRON SYST INC,ALLENTOWN,PA 18106

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 04期

关键词：

D O I：

10.1149/1.2056249

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Etching of thermal oxides in HF/CH3OH gas mixture at the pressure from 100 to 500 Torr and wafer temperatures from 25 to 120-degrees-C is studied using a commercial cluster tool compatible reactor. Pressure and temperature are selected to control condensation of reactants on the etched surfaces, and hence, the thermal oxide etch rate. Using this etching mode, controlled etching of thermal oxides at rates up to 200 angstrom/min was achieved without any water vapor intentionally added to the input gases.

引用

页码：L64 / L66

页数：3

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