INSB DIODES UNDER CONTROLLED SURFACE CONDITIONS

[1] EATON GK, 1962, PHYS CHEM SOLIDS, V23, P1473

[2] ANOMALOUS BARRIER CAPACITANCE IN P-N JUNCTIONS OF INSB [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1717 - 1719

[3] ENERGY BANDS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1682 - +

[4] ABSORPTION AND DISPERSION OF INDIUM ANTIMONIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (08): : 776 - 784

[5] PHOTOCONTROLLED SURFACE CONDUCTANCE IN ANODIZED INSB [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1524 - &

[6] NASLEDOV DN, 1962, SOV PHYS-SOL STATE, V4, P78

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[8] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1959, 115 (02): : 266 - 273

[1] EATON GK, 1962, PHYS CHEM SOLIDS, V23, P1473

[2] ANOMALOUS BARRIER CAPACITANCE IN P-N JUNCTIONS OF INSB [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1717 - 1719

[3] ENERGY BANDS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1682 - +

[4] ABSORPTION AND DISPERSION OF INDIUM ANTIMONIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (08): : 776 - 784

[5] PHOTOCONTROLLED SURFACE CONDUCTANCE IN ANODIZED INSB [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1524 - &

[6] NASLEDOV DN, 1962, SOV PHYS-SOL STATE, V4, P78

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[8] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1959, 115 (02): : 266 - 273