POSITRON MOBILITY MEASUREMENTS AND THEIR RELEVANCE TO DEFECT AND IMPURITY STUDIES IN SEMICONDUCTORS AND INSULATORS

被引：14

作者：

BELING, CD ^{[1
]}

SIMPSON, RI ^{[1
]}

STEWART, MG ^{[1
]}

WANG, YY ^{[1
]}

FUNG, S ^{[1
]}

WAI, JCH ^{[1
]}

SUN, TN ^{[1
]}

机构：

[1] UNIV HONG KONG,DEPT PHYS,HONG KONG,HONG KONG

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 102卷 / 02期

关键词：

D O I：

10.1002/pssa.2211020209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：537 / 547

页数：11

共 25 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[2] A FIELD-ASSISTED MODERATOR FOR LOW-ENERGY POSITRON BEAMS [J].

BELING, CD ;

SIMPSON, RI ;

CHARLTON, M ;

JACOBSEN, FM ;

GRIFFITH, TC ;

MORIARTY, P ;

FUNG, S .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (02) :111-116

[3] POSITRON IMPLANTATION-PROFILE EFFECTS IN SOLIDS [J].

BRANDT, W ;

PAULIN, R .

PHYSICAL REVIEW B, 1977, 15 (05) :2511-2518

[4] POSITRON DIFFUSION IN SOLIDS [J].

BRANDT, W ;

PAULIN, R .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07) :2430-&

[5] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].

BRORSON, SD ;

DIMARIA, DJ ;

FISCHETTI, MV ;

PESAVENTO, FL ;

SOLOMON, PM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313

[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[8] POSITRONIUM-LIKE STATES IN GAAS AT LOW-TEMPERATURE [J].

DEKHTYAR, IY ;

ADONKIN, VT ;

LIKHTOROVICH, SP ;

RUSTAMOV, SA .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01) :K55-K58

[9]

DEKHTYAR IY, 1982, POSITRON ANNIHILATIO, P625

[10]

DLUBEK G, 1986, ANN PHYS-LEIPZIG, V43, P178, DOI 10.1002/andp.19864980309

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