共 12 条
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[2]
Chow D.H., Schulman J.N., Ozbay E., Bloom D.M., Investigation of In0.53Ga047As/AlAs Resonant Tunneling Diodes for High Speed Switching, Appl. Phys. Lett, 61, 14, (1992)
[3]
Soderstrom J.R., Brown E.R., Parker C.D., Mahoney L.J., Yao J.Y., Andersson T.G., McGill T.C., Growth and Characterization of High Current Density, High-Speed InAs/AlSb Resonant Tunneling Diodes, Appl. Phys. Lett, 58, 3, (1991)
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Brown E.R., Soderstrom J.R., Parker C.D., Mahoney L.J., Molvar K.M., McGill T.C., Oscillations Up To 712 GHz in InAs/AlSb Resonant-Tunneling Diodes, Appl. Phys. Lett, 58, 20, (1991)
[5]
Liu H.C., Coon D.D., Heterojunction Double-Barrier Diodes for Logic Applications, Appl. Phys. Lett, 50, (1987)
[6]
Diamond S.K., Ozbay E., Rodwell M.J.W., Bloom D.M., Fabrication of Resonant Tunneling Diodes for Switching Applications, Proc. Conf. Picosecond Electronics and Optoelectronics, pp. 9-10, (1989)
[7]
Ozbay E., Bloom D.M., Chow D.H., Schulman J.N., 1.7 ps, Microwave, Integrated-Circuit-Compatible InAs/AlSb Resonant Tunneling Diodes, IEEE Electron Device Lett, 14, 8, (1993)
[8]
Il'inova T.M., Khokhlov R.V., Wave Processes in Lines with Nonlinear Shunt Resistance, Radiotekhnika i Elektronika, 8, pp. 1864-1872, (1963)
[9]
Vorontsov Y.I., Certain Properties of Delay Lines Containing Tunnel Diodes, Radiotekhnika i Elektronika, 9, 4, pp. 478-483, (1964)
[10]
Diamond S.K., Ozbay E., Rodwell M.J.W., Bloom D.M., Resonant Tunneling Diodes for Switching Applications, Appl. Phys. Lett, 64, pp. 153-155, (1989)