ELIMINATION OR MINIMIZATION OF OPTOELECTRONIC CROSSTALK BETWEEN PHOTODIODES AND ELECTRONIC DEVICES IN OEIC ON SI

被引：2

作者：

ZHOU, MJ

HOLLEMAN, J

WALLINGA, H

机构：

[1] Department of Electrical Engineering, University of Twente, 7500 AÉ Enschede

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 11期

关键词：

INTEGRATED OPTOELECTRONICS; MINORITY CARRIERS; CROSSTALK;

D O I：

10.1049/el:19940615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode.

引用

页码：895 / 897

页数：3