PERFORMANCE OF A GAAS ELECTRON SOURCE

被引：4

作者：

CALABRESE, R

CIULLO, G

DELLAMEA, G

EGENI, GP

GUIDI, V

LAMANNA, G

LENISA, P

MACIGA, B

RIGATO, V

RUDELLO, V

TECCHIO, L

YANG, B

ZANDOLIN, S

机构：

[1] UNIV BARI,DIPARTIMENTO FIS,I-70125 BARI,ITALY

[2] UNIV FERRARA,DIPARTIMENTO FIS,I-44100 FERRARA,ITALY

[3] INFN,I-44100 FERRARA,ITALY

[4] LAB NAZL LEGNARO,I-35020 LEGNANO,ITALY

[5] INFN,I-70125 BARI,ITALY

[6] POLITECN MILAN,I-20100 MILAN,ITALY

[7] INFN,I-10125 TURIN,ITALY

[8] PROEL TECNOL,FLORENCE,ITALY

[9] INFN,I-20100 MILAN,ITALY

[10] UNIV TURIN,DIPARTIMENTO FIS SPERIMENTALE,I-10125 TURIN,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 340卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)91286-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation.

引用

页码：109 / 113

页数：5

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