CALCULATED TRACKS IN PLASTICS AND CRYSTALS

被引：20

作者：

DITLOV, V

机构：

[1] Scientific Institute of Photo-chemical Industry, Leningradskii pr., Moscow

来源：

RADIATION MEASUREMENTS | 1995年 / 25卷 / 1-4期

关键词：

REGISTRATION THEORY; TRACKS; ETCHING; DETECTOR; IONS;

D O I：

10.1016/1350-4487(95)00041-C

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We built up a simple mathematical apparatus in order to study particularities of behavior of etch processing in the very close distances from track axis and we studied the influence of different types of spatial damage distributions on the track parameters and etching kinetic.

引用

页码：89 / 94

页数：6