FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS

被引:11
作者
HILSUM, C
机构
来源
PHYSICS LETTERS | 1966年 / 20卷 / 02期
关键词
D O I
10.1016/0031-9163(66)90905-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:136 / &
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共 9 条
[1]  
BUTCHER P, IN PRESS
[2]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[3]  
HEEKS S, IN PRESS
[4]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&
[5]   ANISOTROPIC PHONON SCATTERING OF ELECTRONS IN GERMANIUM AND SILICON [J].
ITO, R ;
KAWAMURA, H ;
FUKAI, M .
PHYSICS LETTERS, 1964, 13 (01) :26-27
[6]  
KING GSD, PRIVATE COMMUNICATIO
[7]   POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].
RIDLEY, BK ;
WATKINS, TB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&
[8]  
STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406
[9]  
STRATTON R, 1960, SOLID STATE PHYS, V1, P343