STUDY OF 0.8 EV DEEP LEVEL PHOTO-LUMINESCENCE IN UNDOPED LEC SEMI-INSULATING GAAS

被引：15

作者：

KIKUTA, T

TERASHIMA, K

ISHIDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期

关键词：

D O I：

10.1143/JJAP.22.L541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L541 / L543

页数：3

共 18 条

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[2] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].

ELLIOTT, KR .

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[3]

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[4] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[5]

HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19

[6] STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

KIKUTA, T ;

TERASHIMA, K ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L409-L411

[7] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[8]

MIERCEAROUSSEL A, 1981, APPL PHYS LETT, V38, P1007

[9]

OLIVER JR, 1981, ELECTRON LETT, V29, P839

[10] PHOTOLUMINESCENCE STUDY OF CARBON DOPED GALLIUM-ARSENIDE [J].

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