CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K

被引：127

作者：

BOESCH, HE ^{[1
]}

MCGARRITY, JM ^{[1
]}

机构：

[1] HARRY DIAMOND LABS, ADELPHI, MD 20783 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1520 / 1525

页数：6

共 15 条

[1] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J].

AUSMAN, GA ;

MCLEAN, FB .

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[2]

AUSMAN GA, COMMUNICATION

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

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AUSMAN, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2163-2167

[4]

BOESCH HE, TM7633 H DIAM LAB

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2227-2233

[8] MECHANISMS OF CHARGE BUILDUP IN MOS INSULATORS [J].

JOHNSON, WC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2144-2150

[9] RAPID ANNEALING AND CHARGE INJECTION IN AL2O3 MIS CAPACITORS [J].

MCLEAN, FB ;

BOESCH, HE ;

WINOKUR, PS ;

MCGARRITY, JM ;

OSWALD, RB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :47-55

[10] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J].

MCLEAN, FB ;

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1506-1512

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