ENERGY-LEVEL STRUCTURE OF 2-DIMENSIONAL ELECTRONS CONFINED AT THE ALXGA1-XAS/GAAS INTERFACE STUDIED BY PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY

被引：17

作者：

ZHAO, QX

FU, Y

HOLTZ, PO

MONEMAR, B

BERGMAN, JP

CHAO, KA

SUNDARAM, M

MERZ, JL

GOSSARD, AC

机构：

[1] UNIV TRONDHEIM,NORWEGIAN INST TECHNOL,DEPT PHYS,N-7034 TRONDHEIM,NORWAY

[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.5035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of one-sided modulation-doped n-channel Al(x)Ga(1-x)As/GaAs heterostructures has been studied by photoluminescence excitation spectroscopy in samples with a narrow (almost-equal-to 500 angstrom) active GaAs region. The excited two-dimensional (2D) electron states are observed optically at 2 K, and 2D hole quantization is also found to be important for the structure investigated. Theoretical calculations including exciton effects show good agreement with the experimental data.

引用

页码：5035 / 5038

页数：4

共 19 条

[1]

Alferov Zh. I., 1986, JETP Letters, V43, P569

[2] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].