DOPING IN ISOELECTRONIC CUPRATE SUPERCONDUCTORS

被引：13

作者：

GOLDSCHMIDT, D ^{[1
]}

DIREKTOVITCH, Y ^{[1
]}

KNIZHNIK, A ^{[1
]}

ECKSTEIN, Y ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,CROWN CTR SUPERCONDUCT,IL-32000 HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.51.6739

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermoelectric power in the charge-compensated 1:2:3 family (CaxLa1-x)(Ba1.75-xLa0.25+x)Cu3Oy shows that doping occurs also under isoelectronic (constant electron concentration) conditions obtained by keeping the oxygen content y constant. For all values of x and y there exists a single doping parameter y-yM-I(x), where yM-I is the value of y at the metal-insulator transition, suggesting that a single mobile band controls transport and superconductor properties. Isoelectronic doping occurs via capture of mobile electrons by lower-lying low-mobility states, requiring either a shift of the band relative to these states or transfer of spectral density near the Fermi energy. © 1995 The American Physical Society.

引用

页码：6739 / 6742

页数：4

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