PREPARATION OF EPITAXIAL GALLIUM-NITRIDE

被引：15

作者：

NICKL, JJ ^{[1
]}

JUST, W ^{[1
]}

BERTINGE.R ^{[1
]}

机构：

[1] UNIV MUNICH,INST ANORG CHEM,FORSCH LAB FESTKORP CHEM,MUNICH,WEST GERMANY

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1016/0025-5408(74)90066-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1413 / 1420

页数：8

共 11 条

[1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[2] CRYSTAL-GROWTH AND CHARACTERIZATION OF GALLIUM NITRIDE [J].

CHU, TL ;

ITO, K ;

SMELTZER, RK ;

CHU, SSC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :159-162

[3]

Cunningham RD, 1972, J LUMIN, V5, P21, DOI [10.1016/0022-2313(72)90032-4, DOI 10.1016/0022-2313(72)90032-4]

[4] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].

DINGLE, R ;

SELL, DD ;

STOKOWSKI, SE ;

ILEGEMS, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+

[5] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[6] LOW-TEMPERATURE LUMINESCENCE OF GAN [J].

GRIMMEISS, HG ;

MONEMAR, B .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4054-+

[7] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].

ILEGEMS, M ;

LOGAN, RA ;

DINGLE, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&

[8]

Ilegems M.J., 1972, J CRYSTAL GROWTH, V13, P360

[9] GALLIUM DIETHYL CHLORIDE - A NEW SUBSTANCE IN PREARATION OF EPITAXIAL GALLIUM ARSENIDE [J].

LINDEKE, K ;

SACK, W ;

NICKL, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1316-&

[10]

LINH NT, 1974, INT C CRYSTAL GROWTH, P174

← 1 2 →