SINGLE-CRYSTAL GERMANIUM FILMS BY MICROZONE MELTING

[1] Bridgman P.W., 1925, P AM ACAD ARTS SCI, V60, P303

[2] BUCKLEY HE, 1956, CRYSTAL GROWTH, P226

[3] STUDY OF ELECTRON BOMBARDMENT OF THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (08) : 1597 - &

[4] HOLONYAK N, 1962, METALLURGY SEMICONDU, P49

[5] HUNTER LP, 1956, HDB SEMICONDUCTOR EL

[6] LEITZ E, 1950, Patent No. 691335

[7] A UNIFIED REPRESENTATION OF MAGNETIC ELECTRON LENS PROPERTIES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 737 - 745

[8] MASERJIAN J, 1960, 34206 JET PROP LAB T

[9] PFANN WG, 1952, T AM I MIN MET ENG, V194, P747

[10] VAPOR-DEPOSITED SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 995 - 1006

[1] Bridgman P.W., 1925, P AM ACAD ARTS SCI, V60, P303

[2] BUCKLEY HE, 1956, CRYSTAL GROWTH, P226

[3] STUDY OF ELECTRON BOMBARDMENT OF THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (08) : 1597 - &

[4] HOLONYAK N, 1962, METALLURGY SEMICONDU, P49

[5] HUNTER LP, 1956, HDB SEMICONDUCTOR EL

[6] LEITZ E, 1950, Patent No. 691335

[7] A UNIFIED REPRESENTATION OF MAGNETIC ELECTRON LENS PROPERTIES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 737 - 745

[8] MASERJIAN J, 1960, 34206 JET PROP LAB T

[9] PFANN WG, 1952, T AM I MIN MET ENG, V194, P747

[10] VAPOR-DEPOSITED SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 995 - 1006